| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent tungsten residue from remaining on a step portion between a cell and peripheral portion by carrying out a two-step etching process. CONSTITUTION: A capacitor is formed on a cell region(II) of a semiconductor substrate(21). After forming an interlayer dielectric(26) on the resultant structure, a contact hole is formed by selectively etching the interlayer dielectric(26) for exposing the predetermined surface of the semiconductor substrate(21) at a peripheral region(II'). A conductive layer made of tungsten is formed on the resultant structure. The conductive layer formed on a step portion between the cell and peripheral region, is pre-etched by using a sputter etching process. A tungsten plug(28) is formed in the contact hole by entirely etching the conductive layer by in-situ.
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