| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
To provide a cavity in the portion of the silicon substrate which lies beneath the channel region of the MOS transistor.
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| 申请公布号 |
US6570217(B1) |
申请公布日期 |
2003.05.27 |
| 申请号 |
US19990296669 |
申请日期 |
1999.04.22 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SATO TSUTOMU;MIZUSHIMA ICHIRO;TSUNASHIMA YOSHITAKA;IINUMA TOSHIHIKO;MIYANO KIYOTAKA |
| 分类号 |
H01L29/78;H01L21/324;H01L21/336;H01L21/762;H01L29/06;H01L29/786;(IPC1-7):H01L29/26 |
主分类号 |
H01L29/78 |
| 代理机构 |
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