发明名称 |
SINGLE/MULTI CANTILEVER PROBE HAVING HIGH RESOLUTION USED IN ATOMIC FORCE MICROSCOPY AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: An FET-tip type single/multi cantilever probe and a method for fabricating the same are provided to store and read an electric charge with high-speed, high-precision and high resolution by installing a tip in an FET channel formed on a front end of a cantilever arm. CONSTITUTION: A single FET-tip cantilever probe(100) includes a p-type single crystal silicon-on-insulator substrate(101). A silicon oxide layer(201) and an upper silicon layer(102) are sequentially deposited on the p-type single crystal silicon-on-insulator substrate(101). A cantilever arm(408) is formed by patterning the upper silicon layer(102) extending from a probe body(108) of the single FET-tip cantilever probe(100). A p-type tip(406) is formed in a front end of the cantilever arm(408). The p-type tip(406) is positioned at a center of a channel forming area(503), thereby forming an FET channel having n++-pn++ type structure. |
申请公布号 |
KR20030041726(A) |
申请公布日期 |
2003.05.27 |
申请号 |
KR20010072797 |
申请日期 |
2001.11.21 |
申请人 |
KUK, YOUNG;SUH, MOON SUHK |
发明人 |
KUK, YOUNG;SUH, MOON SUHK |
分类号 |
G02B21/00;B82Y20/00;G01B21/00;G01N37/00;(IPC1-7):G01N13/16 |
主分类号 |
G02B21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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