| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method, using a fluorine-based etching gas, especially one which uses ICP (inductively-coupled plasma) type low-pressure, high-density plasma, for effectively preventing unwanted particles without decreasing the productivity. SOLUTION: For each treatment of a prescribed number of substrates, oxygen (O2 ) is fed in an etching chamber 11 and oxygen plasma is generated, while the inside of the etching chamber is held in a vacuum state. In the etching treatment of the substrate, a deposited layer of AlF3 generated at the inner wall of the vacuum chamber 11 is partly removed due to the sputtering effect of oxygen plasma ions. At the same time, the remaining deposited layer of AlF3 is changed in quality by the oxygen plasma and flaking is prevented.
|
