| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element capable of forming reliable tunnel oxidation film and CG-FG insulating film simultaneously. SOLUTION: The manufacturing method of the semiconductor element comprises; a step of forming a thermal oxidation film and a phosphorus-doped Poly-Si sequentially and forming a Poly-Si control gate electrode so that the thermal oxidation film remains on the entire surface; a step of disposing SiN film on the entire surface, forming a side wall SiN film on the side wall of the control gate electrode by means of etching, and then removing the oxidation film remaining on an Si substrate; a step of disposing thin-film amorphous Si of 1-5 nm in thickness on the entire surface, oxidizing all amorphous Si on the side wall SiN film, simultaneously oxidizing the amorphous Si on the Si substrate together with the substrate, and forming the tunnel oxidation film; and a step of disposing the phosphorus-doped Poly-Si film and forming a Poly-Si side wall floating gate by means of the etching.
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