| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity of film thickness by keeping the uniformity of temperature distribution within the plane of substrate due to the processing gas introduced in the substrate processing apparatus. SOLUTION: The substrate processing apparatus to perform the predetermined processes to a substrate 7, by supplying the processing gas thereto comprises a substrate-setting unit 4 for setting the substrate, a heat-generating unit 8 for heating the substrate, a processing gas inlet unit 21 for supplying the processing gas to the locations other than the main surface of substrate with the flow in a direction perpendicular to the main surface of substrate from the upper side of the main surface of substrate being set to the substrate setting unit, and a gas venting 15 for venting the introduced processing gas toward the external side of the substrate.
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