| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for correcting a proximity effect which can improve the accuracy of a proximity effect correction by taking differences in the quantity of out-of-focused light between meshes corresponding to divisions of a mask pattern into consideration. SOLUTION: In a method (S101 to S107) for dividing a lithographic mask pattern using a charged particle beam into a plurality of meshes and correcting a proximity effect on the basis of the mask bias amount of each mesh, a beam blur for each mesh is found (S111, S112, S121 and S122), the mask bias amount is corrected on the basis of the beam blur (S113 and S123), and the proximity effect is corrected based on the corrected mask bias amount. Since the proximity effect correction is carried out using the corrected mask bias amount taking the beam blur caused by a Coulomb effect into consideration, the accuracy of the proximity effect correction can be improved.</p> |
