| 摘要 |
PROBLEM TO BE SOLVED: To independently set the source voltages of an electrically writable and erasable semiconductor storage circuit and other MISFETs. SOLUTION: A device internally has a plurality of memory cells each having a floating gate electrode where information is recorded or written by injecting or discharging electrons, and a control electrode which comes into contact with the floating gate across an insulating film, so as to control the injection or discharge of the electrons into or from the floating gate electrode, the electrically writable; erasable semiconductor storage circuit which has word lines and data lines connected to the memory cells; and a voltage control circuit which generates a voltage used to inject or discharge the electrons by stepping up or down a source voltage. |
