发明名称 |
SEMICONDUCTOR DEVICE EXCELLENT IN HEAT DISSIPATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of driving with a large current by making use of its excellent heat dissipation. SOLUTION: There is provided a semiconductor device excellent in heat dissipation wherein there are joined through an insulating film 9 a surface of a semiconductor device A1 including a plurality of operation electrodes S, G and D formed on the surface and a surface of a heat dissipation substrate A2 including a recessed portion 8a formed on the surface for receiving at least the operation electrodes, and a crystal growing substrate 1 upon manufacturing the semiconductor device A1 is removed.
|
申请公布号 |
JP2003152138(A) |
申请公布日期 |
2003.05.23 |
申请号 |
JP20010343811 |
申请日期 |
2001.11.08 |
申请人 |
FURUKAWA ELECTRIC CO LTD:THE |
发明人 |
YOSHIDA KIYOTERU |
分类号 |
C23C14/06;H01L21/338;H01L23/36;H01L23/373;H01L23/40;H01L29/812;(IPC1-7):H01L23/36 |
主分类号 |
C23C14/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|