发明名称 SEMICONDUCTOR DEVICE EXCELLENT IN HEAT DISSIPATION
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of driving with a large current by making use of its excellent heat dissipation. SOLUTION: There is provided a semiconductor device excellent in heat dissipation wherein there are joined through an insulating film 9 a surface of a semiconductor device A1 including a plurality of operation electrodes S, G and D formed on the surface and a surface of a heat dissipation substrate A2 including a recessed portion 8a formed on the surface for receiving at least the operation electrodes, and a crystal growing substrate 1 upon manufacturing the semiconductor device A1 is removed.
申请公布号 JP2003152138(A) 申请公布日期 2003.05.23
申请号 JP20010343811 申请日期 2001.11.08
申请人 FURUKAWA ELECTRIC CO LTD:THE 发明人 YOSHIDA KIYOTERU
分类号 C23C14/06;H01L21/338;H01L23/36;H01L23/373;H01L23/40;H01L29/812;(IPC1-7):H01L23/36 主分类号 C23C14/06
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