| 摘要 |
PURPOSE: A thin film magnetic memory device and its information programming method are provided, in which required information is programmed efficiently by using a magnetic memory element similar to a normal memory cell. CONSTITUTION: A thin film magnetic memory device comprises a memory array having a plurality of memory cells for magnetically storing data, wherein each of the memory cells includes a magnetic storage portion for storing data when being magnetized in one of two directions. The thin film magnetic memory device further comprises a plurality of program registers each storing an one-bit program signal for use in programming of information used in operation of the thin film magnetic memory device, wherein each of the program registers includes at least one program element having an electric resistance varying according to a magnetization direction thereof. The electric resistance of the program element is capable of being fixed with physical breakdown operation. |
