发明名称 |
Method of forming a superconductor film |
摘要 |
The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target respectively each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is not needed.
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申请公布号 |
US2003096711(A1) |
申请公布日期 |
2003.05.22 |
申请号 |
US20020235788 |
申请日期 |
2002.09.06 |
申请人 |
COMMUNICATIONS RESEARCH LABORATORY, INDEPENDENT ADMINISTRATIVE INSTITUTION |
发明人 |
SAITO ATSUSHI;KAWAKAMI AKIRA;SHIMAKAGE HISASHI;WANG ZHEN |
分类号 |
C01G1/00;C01B35/04;C23C14/06;C23C14/34;C23C14/35;C23C14/56;H01L39/12;H01L39/24;(IPC1-7):H01L39/00;C23C14/32 |
主分类号 |
C01G1/00 |
代理机构 |
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