| 摘要 |
PURPOSE: To suppress the formation of undesirable natural oxide films on the boundary planes between a semiconductor substrate and gate insulating films of MIS-FETs, which have the respective gate insulation films with thicknesses different from each other in a process in which the MIS-FETS are formed on the same semiconductor substrate. CONSTITUTION: Gate insulation films 9a of MIS-FETs (Qn1 and Qp1) of which an internal circuit is composed comprise oxidized silicon nitride films and gate insulation films 9b of MIS-FETs (Qn2 and Qp2) of which an I/O circuit is composed comprise laminated films of oxidized silicon nitride films and high dielectric films. As a process in which two types of gate insulation films 9a and 9b are formed on the substrate 1 is carried out continuously in a multichamber type processing apparatus and the substrate is not exposed to the atmosphere, the penetration of undesirable foreign substances and the formation of undesirable natural oxide films on boundary planes between the substrate 1 and the gate insulation films 9a and 9b can be suppressed.
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