| 摘要 |
The invention provides a method that forms a circuit to achieve a high-speed performance and a circuit to attain a high reliability on one and the same substrate, in a semiconductor integrated circuit device containing MIS transistors in which the gate insulating film is made of a high dielectric constant insulating film. The method removes the high dielectric constant insulating film on the diffusion regions of the MIS transistors in the logic region and I/O region, and forms the silicide layers of a low resistance on the surfaces of the diffusion regions. In the memory region, on the other hand, it does not form the silicide layers on the diffusion regions of the MIS transistors, and covers the diffusion regions with the high dielectric constant insulating film, thereby preventing damages to the semiconductor substrate during forming the spacers, silicide layers, and contact holes.
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