LATERAL TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a lateral transistor is provided to improve characteristics like base transit time, emitter efficiency and common emitter current gain by diffusing impurities into the periphery of an emitter area and a collector area. CONSTITUTION: A P-type substrate(2) of an almost plate type is prepared. An N¬+ type buried layer(4) is formed on the P-type substrate. A predetermined thickness of an N¬- type epi-layer(6) is grown on the P-type substrate and the N¬+ type buried layer. An oxide layer in which a plurality of predetermined regions are opened by a photolithography process is formed on the N¬- type epi-layer. A predetermined thickness of an N-type well(14) is formed in the N¬- type epi-layer opened by the oxide layer. An N¬+ type base area(12) is formed inside the N-type well wherein the N¬+ type base area is connected to the N¬+ type buried layer. Boron is diffused/ion-implanted into a position separated from the N¬+ type base area by a predetermined distance to form a P-type emitter area(8) and a P-type collector area(10).