ETCHING METHOD AND PLASMA ETCHER

摘要

A plasma etching method for setting a large etching ratio and forming a properly shaped hole, and a plasma etcher. For etching an etching target film (204) with a patterned organic film (202) as a mask, a treatment gas is introduced into a hermetic treatment container (104). A lower electrode (106) is provided with a high−frequency power source (122) of e.g. 40MHz and a high−frequency source (128) of 3.2MHz to impress two different high−frequency powers on the lower electrode. A suitable combination of the sizes of the high−frequency powers enables etching treatment by a low plasma electron density (Ne) and high self−bias voltage (Vdc).