| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor single crystal, by which a boron oxide film is easily and stably formed on the surface of a crucible made of pyrolytic boron nitride, which crucible is used in a vertical temperature gradient method or a vertical Bridgman method, the generation of a defective part in the parts sealed by a boron oxide sealant on the melt of a raw material crystal is avoided, and thereby a good quality single crystal of GaAs or the like can be grown. SOLUTION: When a boron oxide thin film is previously formed on the surface of the crucible of the pyrolytic boron nitride by heating the crucible to a high temperature in air, and then a seed crystal, the boron oxide sealant and the raw material crystal are successively arranged in the crucible, the weight ratio of the addition amount of the boron oxide sealant to the raw material crystal is adjusted to be 1/1,200 to 1/120. Thereby, the boron oxide sealant and/or boron oxide thin film substantially covers the melt of the raw material crystal, and the direct contact of the melt with the inner surface of the crucible can be avoided.
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