| 摘要 |
PURPOSE: A base resin for ArF resist and its preparation method are provided, to obtain a base resin which is transparent at a wavelength of 193 nm, and has an excellent etching resistance. CONSTITUTION: The base resin is represented by the formula I and has a weight average molecular weight of 10,000-50,000, wherein R is an alkyl group of C1-C8 or a cycloalkyl group of C4-C10; and m and n are an integer and m/(m+n) is 0.3-0.6. Preferably the R is an adamantyl group, an isobornyl group, a methyl group, an ethyl group, an isopropyl group, an n-butyl group or hydroxyethyl group. The base resin is prepared by copolymerizing an ether dimer compound of t-butylhydroxymethyl acrylate and an ether dimer compound of alkylhydroxymethyl acrylate.
|
