| 发明名称 |
Method for providing pulsed plasma during a portion of a semiconductor wafer process |
| 摘要 |
A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.
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| 申请公布号 |
US6566272(B2) |
申请公布日期 |
2003.05.20 |
| 申请号 |
US19990360883 |
申请日期 |
1999.07.23 |
| 申请人 |
APPLIED MATERIALS INC. |
发明人 |
PATERSON ALEX;YAMARTINO JOHN M.;LOEWENHARDT PETER K.;ZAWALSKI WADE |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):H01L21/302;H01L21/306 |
主分类号 |
H01L21/302 |
| 代理机构 |
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| 主权项 |
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