发明名称 |
Semiconductor device |
摘要 |
First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P+-type separated area.
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申请公布号 |
US6566728(B1) |
申请公布日期 |
2003.05.20 |
申请号 |
US20000678555 |
申请日期 |
2000.10.04 |
申请人 |
SANYO ELECTRIC CO., LTD.;HOSIDEN CORP |
发明人 |
OKAWA SHIGEAKI;OHKODA TOSHIYUKI;OHBAYASHI YOSHIAKI;YASUDA MAMORU;SAEKI SHINICHI;OSAWA SHUJI |
分类号 |
H04R19/04;H01L27/00;H04R19/00;(IPC1-7):H01L29/00 |
主分类号 |
H04R19/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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