发明名称 Encapsulated conductive pillar
摘要 The present invention provides an encapsulated 3-D conductive pillar and a method of formation thereof. Significant economic savings are achieved by filling a substantial portion of the volume of the pillar with a lesser expensive conductive material. Additionally, the encapsulated 3-D conductor pillar forms a suitable unreactive, oxygen-stable electrode for use with high-dielectric constant (HDC) materials as the encapsulating barrier layer metal provides a stable conductive interface between the HDC material and the encapsulated conductive material.
申请公布号 US6566701(B2) 申请公布日期 2003.05.20
申请号 US20010035109 申请日期 2001.12.27
申请人 MICRON TECHNOLOGY, INC. 发明人 AGARWAL VISHNU KUMAR
分类号 H01L21/02;H01L21/768;(IPC1-7):H01L27/108 主分类号 H01L21/02
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