| 摘要 |
An IGBT has a p-emitter layer and p-base layer, which are arranged on both sides of an n-base layer. A pair of main trenches are formed to extend through the p-base layer and reach the n-base layer. In a current path region interposed between the main trenches, a pair of n-emitter layers are formed on the surface of the p-base layer. A narrowing trench is formed to extend through the p-base layer and reach the n-base layer. The narrowing trench narrows a hole flow path formed from the n-base layer to the emitter electrode through the p-base layer, thereby increasing the hole current resistance.
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