发明名称 Semiconductor device and power converter using the same
摘要 To reduce the field intensity on the termination surface, almost not affecting the on-characteristic, a drift layer is made of two layers, an n-layer and n- layer, and a termination region is formed on the surface of the above n- layer. An impurity concentration ratio between the n- layer and the n-layer is less than 1:2, and the thickness of the n- layer is less than that of a source n+ layer. Reliability can be secured even in a high temperature operation.
申请公布号 US6566726(B1) 申请公布日期 2003.05.20
申请号 US20000516501 申请日期 2000.03.01
申请人 HITACHI, LTD. 发明人 ONOSE HIDEKATSU;YATSUO TSUTOMU;OHNO TOSHIYUKI;OIKAWA SABUROU
分类号 H01L29/06;H01L29/12;H01L29/47;H01L29/78;H01L29/80;H01L29/861;H01L29/872;(IPC1-7):H01L29/40 主分类号 H01L29/06
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