发明名称 IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: An image sensor and a method for manufacturing the same are provided to be capable of improving photo sensitivity by minimizing the difference of focusing point between the center portion and edge portion of a microlens. CONSTITUTION: After forming a pixel having a light receiving element(22) on a substrate(20), an interlayer dielectric(23) and a metal wire(24) are sequentially formed on the resultant structure. A passivation layer(25) is formed on the resultant structure. A focusing point compensation layer(26) is formed on the passivation layer. A planarization layer(27) is formed on the resultant structure. A microlens(28) is then formed on the planarization layer. At the time, the focusing point compensation layer(26) has a different index of refraction compared to the planarization layer.
申请公布号 KR20030038836(A) 申请公布日期 2003.05.17
申请号 KR20010068980 申请日期 2001.11.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KWON, GYEONG GUK
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
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