| 摘要 |
<p>PROBLEM TO BE SOLVED: To assure the mask pattern dimensional accuracy, without generating under exposure region. SOLUTION: When the width of a pattern element of a lattice pattern is W, the space width in between the pattern elements is S, a lattice pattern area density isαp, the minimum value of a forward scattering strength is Ffmin.αp, the position taking the minimum value is P, and the allowed lower limit value of the W and S is Lmin, theαp is represented by a function D(W, S) from the geometrical relation of the lattice pattern, the forward scattering term of the energy strength distribution function is surface-integrated, and the forward scattering strength at the position P is represented by the function E(P: W, S). The method for rectangular lattice data converting the mask pattern for charged particle beam exposure comprises the steps of obtaining the values of the W and the S for satisfying the relational formula D(W, S)=αp and E(P:W, S)=Ffmin.αp (S71, S72) for the given values of theαp, Ffmin and Lmin (S70), converting the rectangular pattern to the lattice pattern (S74, S76) so as to satisfy W>Lmin and S>Lmin (S73, S75), and performing boundary-processing (S78).</p> |
