发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus that can generate stable plasma in a chamber even if inputted microwave power widely ranges, and hence can improve stability in plasma treatment such as ashing and etching. SOLUTION: The plasma treatment apparatus comprises a top board 11 that has a slit 11a formed at a portion opposite to a waveguide 10 of a vacuum chamber 20 for introducing a microwave inside the vacuum chamber 20 and propagates the microwave that has passed through the slit 11a to the side surface of the vacuum chamber 20 along an internal surface, and a plate-like dielectric 40 provided at the side of the vacuum chamber 20 on the top board 11 and at the same time allows the microwave to permeate. On the side surface of the vacuum chamber 20 of a dielectric 30, a projection 41 is formed.
申请公布号 JP2003142457(A) 申请公布日期 2003.05.16
申请号 JP20010335529 申请日期 2001.10.31
申请人 TOSHIBA CORP;NAGOYA INDUSTRIAL SCIENCE RESEARCH INST 发明人 YAMAUCHI TAKEMOTO;SUGAI HIDEO
分类号 H05H1/46;H01L21/302;H01L21/3065 主分类号 H05H1/46
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