METHOD FOR FORMING SENSING LAYER FOR SEMICONDUCTOR-TYPE GAS SENSOR AND SEMICONDUCTOR-TYPE GAS SENSOR ARRAY

摘要

PURPOSE: A method for forming a sensing layer for a semiconductor-type gas sensor and a semiconductor-type gas sensor array are provided to be capable of obtaining an SnO2 sensing layer to which catalysts are uniformly added. CONSTITUTION: A substrate is prepared for forming a sensing layer on the same(20). An Sn thin film having a thickness of 100-1000 angstrom is deposited on the substrate under a predetermined pressure(21). A Pt thin film having a thickness of 10-50 angstrom is deposited on the Sn thin film(22). The Sn and Pt thin film are alternately deposited on the resultant structure(23). An SnO2 sensing layer to which Pt is uniformly added, is obtained by carrying out a thermal oxidation at the stacked structure of the Sn and Pt thin film(24).