发明名称 |
METHOD OF FORMING BUMP, FLIP CHIP, SEMICONDUCTOR DEVICE, THEIR MANUFACTURING METHODS, CIRCUIT BOARD, AND ELECTRONIC EQUIPMENT |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of forming a bump by which a partly thickened bump and composed of low-melting point metal can be formed easily. SOLUTION: After at least one layer is formed on a pad 12 so that an outermost layer becomes a first brazing material layer 28, a metallic layer 32 and a second brazing material layer 36 are successively formed on the brazing material layer 28. The second brazing material layer 36 is formed by displacement plating by which a brazing material is precipitated by melting the metallic layer 32 which becomes a basis material.</p> |
申请公布号 |
JP2003142512(A) |
申请公布日期 |
2003.05.16 |
申请号 |
JP20010334687 |
申请日期 |
2001.10.31 |
申请人 |
SEIKO EPSON CORP |
发明人 |
YODA TAKESHI;YUZAWA TAKESHI;IWADARE TAKESHI |
分类号 |
H01L21/60;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|