发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To shorten a time required for a test in a nonvolatile semiconductor memory being electrically writable and erasable such as a flash memory. SOLUTION: This device is provided with a counter circuit (50) for counting the number of defects caused by write and erasure of a prescribed unit such as a sector, and a comparing circuit (51) for determining whether a value counted by the counter circuit exceeds an allowable value of the number of defects previously set. When the count value of the counter circuit exceeds the allowable value set to the register, a write operation or an erasure operation is not performed even if a command of write or erasure is inputted from the outside.</p>
申请公布号 JP2003141900(A) 申请公布日期 2003.05.16
申请号 JP20010334660 申请日期 2001.10.31
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 OMURO JITSUWA;OSHIMA KAZUYOSHI;HOSHIDA AKIHIKO;MANITA KIICHI;KANEMITSU MICHITARO;UDO SHINJI;KIKUCHI KAZUE;UJIIE KAZUAKI;SAKAI MASAHIRO
分类号 G11C16/02;G11C16/34;G11C29/12;G11C29/34;G11C29/44;(IPC1-7):G11C29/00 主分类号 G11C16/02
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