发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: To provide a semiconductor device in which connection reliability and stability are improved when a bonding wire is bonded to a bonding pad in a semiconductor device with a multilayer wiring structure using a copper wire, and a method of manufacturing the same. CONSTITUTION: A third layer wire 17 and a bonding pad 71, both of which are made of aluminum alloys, are partially formed on a second interlayer insulating film 14. An open hole 74 having a bottom surface defined by the bonding pad 71 is partially formed in a third interlayer insulating film 63, fourth interlayer insulating film 67, protection insulating film 72 and buffer coating film 73. A bonding wire 75 is inserted through the open hole 74 and bonded to the bonding pad 71.
申请公布号 KR20030038324(A) 申请公布日期 2003.05.16
申请号 KR20020034553 申请日期 2002.06.20
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 IZUMITANI JUNKO;TAKEWAKA HIROKI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L21/82;H01L23/485;H01L23/522;H01L23/532 主分类号 H01L23/52
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