发明名称 |
BARRIER LAYER FOR SEMICONDUCTOR WAFER INTERCONNECTION STRUCTURE AND METHOD OF DEPOSITING BARRIER LAYER |
摘要 |
PROBLEM TO BE SOLVED: To provide a barrier layer for the interconnection structure of a semiconductor wafer and a method of depositing the barrier layer. SOLUTION: The interconnection structure of a semiconductor device contains a tungsten plug (14) deposited in a via or a contact window (11). A barrier layer (15) isolates the tungsten plug (14) from the surface of a dielectric material (16), and the contact window or the via (11) is formed inside the surface of the dielectric material (16). |
申请公布号 |
JP2003142424(A) |
申请公布日期 |
2003.05.16 |
申请号 |
JP20020280540 |
申请日期 |
2002.09.26 |
申请人 |
AGERE SYSTEMS INC |
发明人 |
BHOWMIK SIDDHARTHA;MERCHANT SAILESH M;SIMPSON DARRELL L |
分类号 |
C23C14/06;C23C14/14;C23C14/34;H01L21/28;H01L21/285;H01L21/768;H01L23/485;(IPC1-7):H01L21/28 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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