发明名称 BARRIER LAYER FOR SEMICONDUCTOR WAFER INTERCONNECTION STRUCTURE AND METHOD OF DEPOSITING BARRIER LAYER
摘要 PROBLEM TO BE SOLVED: To provide a barrier layer for the interconnection structure of a semiconductor wafer and a method of depositing the barrier layer. SOLUTION: The interconnection structure of a semiconductor device contains a tungsten plug (14) deposited in a via or a contact window (11). A barrier layer (15) isolates the tungsten plug (14) from the surface of a dielectric material (16), and the contact window or the via (11) is formed inside the surface of the dielectric material (16).
申请公布号 JP2003142424(A) 申请公布日期 2003.05.16
申请号 JP20020280540 申请日期 2002.09.26
申请人 AGERE SYSTEMS INC 发明人 BHOWMIK SIDDHARTHA;MERCHANT SAILESH M;SIMPSON DARRELL L
分类号 C23C14/06;C23C14/14;C23C14/34;H01L21/28;H01L21/285;H01L21/768;H01L23/485;(IPC1-7):H01L21/28 主分类号 C23C14/06
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