| 摘要 |
A photolithography mask is based on a combination of a half-tone phase mask and an alternating phase mask such that, when the radiation passes through some of the openings, a phase difference is in each case produced between adjacent openings, and the surroundings of the openings are partially transparent and shift the phase of the radiation. Consequently, the advantages of alternating phase masks and half-tone phase masks can be realized on one mask and, accordingly, significantly enlarged process windows for the actual lithography process result with the photolithography mask according to the invention. In particular, these advantages can be obtained with only one absorber material, and the size of non-imaging auxiliary structures is approximately as large as the smallest main structure. In addition, the invention provides methods for fabricating the photolithography masks according to the invention.
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