| 摘要 |
A ferroelectric nonvolatile semiconductor memory comprises a bit line BL1, selective transistor TR1, memory unit MU1 constituted of C M where M>=2 memory cells, and D M plate lines PL. Each memory cell comprises first electrodes 21, 31, ferroelectric layers 22, 32, and second electrodes 33, 34. In the memory unit MU1, the first electrodes 21, 31 of the memory cell have a common structure, and the ferroelectric layers 22, 32 consist of lead titanium-zirconate [PbZrx, TiyO3] that satisfies 0.6<Y/X+Y<=0.9.
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