Semicontrolled power device, semiconducting diode, semiconducting LIGBT, semiconducting LDMOS, and semiconducting bipolar transistor

摘要

For signal transmission between the high-pressure side (2) and the low-pressure side (3) of a semiconductor power component (1), with a reduced surface field (RESURF) region (4) disposed between the high-pressure side (2) and the low-pressure side (3), it is proposed that at least one polysilicon resistor (5) be provided, which is disposed above the RESURF region (4) and is electrically insulated from it, as a result of which a high off-state voltage resistance is assured.