PROCESS FOR PRODUCING SEMICONDUCTOR ARTICLE USING GRADED EXPITAXIAL GROWTH,申请号EP20010973651-传众专利搜索

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发明名称	PROCESS FOR PRODUCING SEMICONDUCTOR ARTICLE USING GRADED EXPITAXIAL GROWTH
摘要
申请公布号	EP1309989(A2)	申请公布日期	2003.05.14
申请号	EP20010973651	申请日期	2001.08.10
申请人	MASSACHUSETTS INSTITUTE OF TECHNOLOGY	发明人	FITZGERALD, EUGENE, A.;ANTONIADIS, DIMITRI, A.;HOYT, JUDY, L.
分类号	H01L21/205;H01L21/02;H01L21/20;H01L21/762;H01L27/12;(IPC1-7):H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
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