发明名称 BOOTSTRAP CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A bootstrap circuit of a semiconductor memory device is provided to obtain the stability of a memory cell by setting up different bootstrap voltage levels at a read operation and a write operation, respectively. CONSTITUTION: A bootstrap circuit is used for forming a voltage higher than the applied supply voltage by using the first capacitor(CAP1) for performing a charge pumping operation. The bootstrap circuit includes a voltage generation circuit and the first to the third capacitors(CAP1 to CAP3). The voltage generation circuit is used for generating the first and the second reference voltages. The second and the third capacitors(CAP2,CAP3) are selectively connected in parallel to the first capacitor in response to the first and the second reference voltages and a write enable bar for enabling one of a write operation and a read operation.
申请公布号 KR20030037330(A) 申请公布日期 2003.05.14
申请号 KR20010067831 申请日期 2001.11.01
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, IN JAE
分类号 G11C8/08;(IPC1-7):G11C8/08 主分类号 G11C8/08
代理机构 代理人
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