发明名称 |
Method of manufacturing a bipolar device |
摘要 |
Disclosed are a method for manufacturing a homojunction or heterojunction bipolar device and a structure of the bipolar device manufactured by the method. The method comprises steps of forming a collector on a substrate including a buried collector to be contacted with the buried collector and protruded in the form of an island; depositing a collector dielectric film on the substrate on which the collector is formed; removing a protruded portion of the collector dielectric film covering the substrate; depositing a first semiconductor electrode layer on the substrate including the collector protruded over the collector dielectric film and flatting a surface of the first semiconductor electrode to expose only the collector formed of a semiconductor material and the first semiconductor electrode; and growing a base thin film including one of silicon and silicon-germanium on the substrate on which only the semiconductor material is exposed, thereby preventing the non-uniformity of a thickness of the base thin film, a contain rate of an impurity and a germanium distribution by the loading effect.
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申请公布号 |
US6562688(B2) |
申请公布日期 |
2003.05.13 |
申请号 |
US20000747761 |
申请日期 |
2000.12.21 |
申请人 |
ASB, INC. |
发明人 |
HAN TAE-HYEON;RYUM BYUNG RYUL;LEE SOO-MIN;CHO DEOK-HO |
分类号 |
H01L29/73;H01L21/331;H01L29/165;(IPC1-7):H01L21/331 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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