发明名称 |
Method of forming a semiconductor device using selective epitaxial growth |
摘要 |
A method of forming a semiconductor device using selective epitaxial growth (SEG) is provided. This method includes forming an insulating layer pattern having a window on a semiconductor substrate. The window exposes a predetermined region of the semiconductor substrate. The substrate having the window is cleaned, thereby removing any native oxide layer on the exposed substrate. The cleaned substrate is oxidized. Accordingly, a sacrificial oxide layer is formed thereon. The sacrificial oxide layer is removed. Thus, the exposed substrate has substantially no crystalline defects. A single crystalline semiconductor layer is then grown on the exposed substrate using SEG.
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申请公布号 |
US6562707(B2) |
申请公布日期 |
2003.05.13 |
申请号 |
US20020043942 |
申请日期 |
2002.01.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
RYU JONG-RYOL;PARK JUNG-WOO;HA JUNG-MIN;CHOI SI-YOUNG |
分类号 |
H01L21/3063;H01L21/20;H01L21/285;H01L21/306;H01L21/336;H01L21/768;H01L29/78;(IPC1-7):H01L21/320;H01L21/476;H01L21/302;H01L21/461 |
主分类号 |
H01L21/3063 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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