| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film multilayer high Q transformer. SOLUTION: To form an outer transformer winding, a plurality of parallel first level metal runners are formed in a first insulating layer overlying the semiconductor substrate. A plurality of vertical conductive vias are formed in third and fourth insulating layers and in electrical connection with each end of the first level metal runners. A fourth insulting layer is disposed over the third insulating layer, and additional vertical conductive vias and a fourth level metal runner are formed therein. Thus, the fourth level metal runners and the intervening vertical conductive vias connect each of the first level metal runners to form a continuously conductive structure having a generally helical shape. The inner winding of the transformer is similarly formed. A plurality of parallel second level metal runners are formed within the second insulating layer, and a plurality of conductive vias and third level metal runners are formed within the third insulating layer to interconnect the plurality of second level metal runners, forming a continuously conductive structure having a generally helical shape and disposed partially within the outer transformer winding. |
