| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of stacked-type CSP, which achieves the thickness reduction of a package while keeping the high reliability of each stacked chip. SOLUTION: A semiconductor CHIP 1 is integrated with a conversion substrate IP1 which is formed with a circuit interconnection on its main surface. The surface of the conversion substrate IP1 is provided with a region CA for establishing connection to another semiconductor CHIP 2, and an external connection portion TA for exchanging signals relating to the semiconductor CHIPs 1, 2. The semiconductor CHIP 2 is provided on a pad of its main surface with a bump BMP and mounted on the connecting region CA by flip-chip mounting. The size of the stacked semiconductor CHIP 2 is rendered smaller than the size of the semiconductor CHIP 1, and the external connecting portion TA is provided on the conversion substrate IP1 around the CHIP 2.
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