发明名称 DEVICE AND METHOD FOR FORMING OXIDE FILM FOR MANUFACTURING SEMICONDUCTOR, AND APPARATUS FOR ULTRAVIOLET IRRADIATION
摘要 PROBLEM TO BE SOLVED: To provide a device and method for forming oxide film, with which an oxide film having a uniform thickness can be formed by generating oxygen radicals by having ultraviolet rays irradiated from a point source. SOLUTION: The oxide film is formed on a substrate 4 by means of the oxygen radicals generated by having the ultraviolet rays irradiated on the process gas containing oxygen from at least one ultraviolet-ray source. The ultraviolet-ray source is composed at least of one point sources 2-1, 2-2, and 2-3, generates vacuum-ultraviolet rays of 146 nm in wavelength, and projects ultraviolet rays. Ultraviolet rays are projected on, while the substrate 4 is rotated, with respect to the ultraviolet-ray sources by means of a rotating mechanism 16.
申请公布号 JP2003133301(A) 申请公布日期 2003.05.09
申请号 JP20010329265 申请日期 2001.10.26
申请人 TOKYO ELECTRON LTD;USHIO INC 发明人 AOYAMA SHINTARO;JINRIKI HIROSHI;HISHINUMA NOBUYOSHI
分类号 B01J19/12;H01L21/31;H01L21/316;(IPC1-7):H01L21/31 主分类号 B01J19/12
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