| 摘要 |
PROBLEM TO BE SOLVED: To surely obtain an evaluation result at the time of evaluating the crystal condition of a polysilicon film formed by a low temperature polycrystallization process. SOLUTION: After an amorphous silicon film 6a is formed on a substrate 2, the substrate 2 is cleaned in a cleaning process. In more practical, a pre- process to form a surface oxide layer 6s on the amorphous silicon film 6a with a solution including ozone and a post-process to remove the surface oxide layer 6s with a solution including fluoric acid are performed. Thereafter, an oxide film 6t is formed on the surface of the cleaned amorphous silicon film 6a. Next, a polysilicon film 6 which becomes the channel layer of a thin film transistor is formed by performing a laser annealing process to the amorphous silicon film 6a. In this case, the linearity and/or periodicity of the space structure of the film surface of the polysilicon film 6 is detected and the condition of the polysilicon film 6 is evaluated based on the detection result of the linearity and/or periodicity.
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