| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of obtaining a hole of a good shape by preventing the occurrence of problems such as bowing, necking or the like. SOLUTION: The probability of adsorption of radicals such as C, CF or the like decreases by making a substrate temperature at 100 deg.C or higher, and radicals, which quickly react with and adhere to upper sidewall of the hole when the substrate temperature is low, change so as to arrive deeply inside the contact hole CH1, and thus a fluorocarbon polymer to be protective film against etching is uniformly deposited on the entire inner wall surface of the contact hole CH1.
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