| 摘要 |
PURPOSE: To provide heat treatment equipment capable of fully uniformly heat- treating a substrate. CONSTITUTION: In a heat treatment chamber 65, a thermal diffusion plate 73 and a heating plate 74 are arranged in this sequence. The heating plate 74 is for preheating a semiconductor wafer W and is composed of white aluminum nitride. Then the thermal diffusion plate 73 is for diffusing heat energy from the heating plate 74 and thus uniformly heating the semiconductor wafer W and is composed of quartz having thermal conductivity lower than that of the heating plate 74.
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