| 摘要 |
PROBLEM TO BE SOLVED: To provide a more simplified substitutional method of the conventional damascene approach. SOLUTION: The cloisonne approach includes a step of coating a semiconductor substrate with a photosensitive polymer, such as pyrrole having a silver salt, aniline, etc. A conductive polymer is exposed to a wet developing solution, by using standard photolithography and the resists developing method and only conductive polymer wires are left on a substrate by removing part of the exposed conductive polymer region. Then an insulating dielectric layer is adhered to the whole structure, and conductive polymer wires are produced by planarizing an insulator by the chemical mechanical polishing (CMP). Another embodiment of this invention includes a method and structure for a self- planarizing interconnecting material containing the conductive polymer. Consequently, the number of treating steps can be reduced, as compared with the conventional technology. |
