发明名称 Method of forming zinc oxide film, method of producing semiconductor element substrate using same, and method of producing photovoltaic element
摘要 A ZnO film forming method is a method of letting an electric current flow between a conductive substrate immersed in at least one forming bath containing at least zinc ions, and a counter electrode immersed in the at least one forming bath, thereby forming a zinc oxide film on the conductive substrate, wherein deposition of a zinc oxide film on a back surface of the conductive substrate is decreased by adjusting (1) a distance between the back surface of the conductive substrate and a region facing at least the periphery of the back surface in a surface facing the back surface, and (2) an electric conductivity of the forming bath, and (3) an electric current density between the conductive substrate and the counter electrode, thereby establishing a mass production technology based on electrolytic deposition of the zinc oxide film as a low cost technology and providing the method of forming the ZnO film with high performance and excellent adhesion to the substrate while reducing the amount of the film deposited on the back surface.
申请公布号 US2003085129(A1) 申请公布日期 2003.05.08
申请号 US20020187810 申请日期 2002.07.03
申请人 SHISHIDO YUKIE 发明人 SHISHIDO YUKIE
分类号 C25D9/08;C25D5/02;C25D7/06;C25D7/12;C25D9/04;C25D21/12;H01L31/04;H01L31/052;H01L31/18;(IPC1-7):C25D7/06;H01L21/31;H01L21/469;C23C16/00;C25D9/00 主分类号 C25D9/08
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