| 摘要 |
The invention refers to a single crystal production method based on the Czochralski method, wherein the number of crucible rotations and the number of crystal rotations or either of two is controlled, lest the number of vibrations for driving a melt, determined on the basis of the number of crucible rotations and the number of crystal rotations during the single crystal growing procedure, should be within the range from 95 % to 105 % of the number of sloshing resonance vibrations of the melt. The invention also refers to a single crystal production method based on the Czochralski method, wherein, in case the number of vibrations for driving a melt, determined on the basis of the number of crucible rotations and the number of crystal rotations during the single crystal growing procedure, is within the range from 95 % to 105 % of the number of sloshing resonance vibrations of the melt, the number of crucible rotations and the number of crystal rotations or either of them is controlled, lest the number of vibrations of the melt due to sloshing should exceed 2000 times during the period when the number of vibrations is within said range. <IMAGE> |
