发明名称 |
Ridge waveguide semiconductor laser diode |
摘要 |
A GaAs based semiconductor laser has a combination of cladding layers including a ridge structure part and a remaining part sandwiching therebetween an etch stop layer. The remaining part overlies the entire surface of laser active layers and has a thickness "D" which satisfies D>=Wx0.5 wherein W is the width of a spot size having a strength of 1/e2 for a near field pattern in the active layer in a direction perpendicular to the active layer, wherein "e" is the bottom of the natural logarithm.
|
申请公布号 |
US6560260(B1) |
申请公布日期 |
2003.05.06 |
申请号 |
US19980201245 |
申请日期 |
1998.11.30 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
OHKUBO MICHIO;IKEGAMI YOSHIKAZU;NAMEGAYA TAKESHI;KASUKAWA AKIHIKO |
分类号 |
H01S5/22;(IPC1-7):H01S5/00 |
主分类号 |
H01S5/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|