| 摘要 |
In one method for monitoring a semiconductor wafer during a spin drying operation, a capacitance value between a capacitance sensor and the wafer is measured as the wafer is being spun to dry a surface thereof. When it is determined that the measured capacitance value has reached a substantially constant level, a signal is generated indicating that the surface of the semiconductor wafer is dry. In another method, light is directed toward a surface of the wafer as the wafer is being spun to dry a surface thereof. The light is directed such that the light that reflects off of the surface of the wafer is substantially perpendicular to the surface of the wafer. The intensity of the light reflected off of the surface of the semiconductor wafer is measured. A signal indicating that the surface of the wafer is dry is generated when the measured intensity of the light reflected off of the surface of the wafer reaches an intensity level that corresponds to a measured intensity of light reflected off of the surface of the wafer when the surface is dry. In methods for spin drying a semiconductor wafer, spinning of the wafer is stopped in response to the signal. Apparatus for spin drying a semiconductor wafer including either a capacitance sensor or an interferometric sensor also are described.
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