发明名称 |
Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor |
摘要 |
A method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) is provided. Specifically, the present invention provides a method for applying an oxide layer to a silicon carbide substrate so that the oxide-substrate interface of the resulting SiC MOSFET is improved. The method includes forming the oxide layer in the presence of metallic impurities.
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申请公布号 |
US6559068(B2) |
申请公布日期 |
2003.05.06 |
申请号 |
US20010894089 |
申请日期 |
2001.06.28 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
ALOK DEV;ARNOLD EMIL;EGLOFF RICHARD;MUKHERJEE SATYENDRANATH |
分类号 |
H01L29/78;H01L21/04;(IPC1-7):H01L21/469 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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