发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
There is provided a semiconductor device using a TFT structure of high reliability.A gate electrode of a TFT includes a first conductive layer, a second conductive layer, and a third conductive layer. An LDD region has a part which overlaps the gate electrode via a gate insulating film and a part which does not overlap the gate electrode. As a result, this can prevent the deterioration when the TFT is on and can reduce a leakage current when the TFT is off.
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申请公布号 |
US6558993(B2) |
申请公布日期 |
2003.05.06 |
申请号 |
US20010860184 |
申请日期 |
2001.05.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;SHARP KABUSHIKI KAISHA |
发明人 |
OHTANI HISASHI;YAMAZAKI SHUNPEI;ITOH MASATAKA |
分类号 |
G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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